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2GB Unbuffered DIMM
Preliminary DDR SDRAM
DDR SDRAM Unbuffered Module
184pin Unbuffered Module based on 1Gb M-die with 64/72-bit ECC/Non ECC
Revision 0.0 April 2004
Rev. 0.0 April 2004
2GB Unbuffered DIMM
Revision History
Revision 0.0 (April, 2004) - First release
Preliminary DDR SDRAM
Rev. 0.0 April 2004
2GB Unbuffered DIMM
184Pin Unbuffered DIMM based on 1Gb M-die (x8)
Ordering Information
Part Number M368L5623MTN-C(L)B3/A2/B0 M381L5623MTM-C(L)B3/A2/B0 Density 2GB 2GB Organization 128M x 64 128M x 72
Preliminary DDR SDRAM
Component Composition 128Mx8 (K4H1G0838M) * 16EA 128Mx8 (K4H1G0838M) * 18EA
Height 1,250mil 1,250mil
Operating Frequencies
B3(DDR333@CL=2.5) Speed @CL2 Speed @CL2.5 CL-tRCD-tRP 133MHz 166MHz 2.5-3-3 A2(DDR266@CL=2) 133MHz 133MHz 2-3-3 B0(DDR266@CL=2.5) 100MHz 133MHz 2.5-3-3
Feature
* Power supply : Vdd: 2.5V 0.2V, Vddq: 2.5V 0.2V * Double-data-rate architecture; two data transfers per clock cycle * Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16) * Differential clock inputs(CK and CK) * DLL aligns DQ and DQS transition with CK transition * Programmable Read latency 2, 2.5 (clock) * Programmable Burst length (2, 4, 8) * Programmable Burst type (sequential & interleave) * Edge aligned data output, center aligned data input * Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh) * Serial presence detect with EEPROM * PCB : Height 1,250 (mil) & double sided * SSTL_2 Interface
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Rev. 0.0 April 2004
2GB Unbuffered DIMM
Pin Configuration (Front side/back side)
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 Front VREF DQ0 VSS DQ1 DQS0 DQ2 VDD DQ3 NC NC VSS DQ8 DQ9 DQS1 VDDQ CK1 /CK1 VSS DQ10 DQ11 CKE0 VDDQ DQ16 DQ17 DQS2 VSS A9 DQ18 A7 VDDQ DQ19 Pin 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 Front A5 DQ24 VSS DQ25 DQS3 A4 VDD DQ26 DQ27 A2 VSS A1 CB0 CB1 VDD DQS8 A0 CB2 VSS CB3 BA1 Pin 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 Front VDDQ /WE DQ41 /CAS VSS DQS5 DQ42 DQ43 VDD */CS2 DQ48 DQ49 VSS /CK2 CK2 VDDQ DQS6 DQ50 DQ51 VSS VDDID DQ56 DQ57 VDD DQS7 DQ58 DQ59 VSS NC SDA SCL Pin 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 Back VSS DQ4 DQ5 VDDQ DM0 DQ6 DQ7 VSS NC NC NC VDDQ DQ12 DQ13 DM1 VDD DQ14 DQ15 CKE1 VDDQ *BA2 DQ20 A12 VSS DQ21 A11 DM2 VDD DQ22 A8 DQ23 Pin 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 Back VSS A6 DQ28 DQ29 VDDQ DM3 A3 DQ30 VSS DQ31 CB4 CB5 VDDQ CK0 /CK0 VSS DM8 A10 CB6 VDDQ CB7
Preliminary DDR SDRAM
Pin 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184
Back /RAS DQ45 VDDQ /CS0 /CS1 DM5 VSS DQ46 DQ47 */CS3 VDDQ DQ52 DQ53 A13 VDD DM6 DQ54 DQ55 VDDQ NC DQ60 DQ61 VSS DM7 DQ62 DQ63 VDDQ SA0 SA1 SA2 VDDSPD
KEY
DQ32 VDDQ DQ33 DQS4 DQ34 VSS BA0 DQ35 DQ40
KEY
VSS DQ36 DQ37 VDD DM4 DQ38 DQ39 VSS DQ44
Note : 1. * : These pins are not used in this module. 2. Pins 44, 45, 47, 49, 51, 134, 135, 140, 142, 144 are used on x72 module ( M381~ ), and are not used on x64 module. 3. Pins 111, 158 are NC for 1row modules & used for 2row modules[ M368(81)L5623MTN(M) ].
Pin Description
Pin Name A0 ~ A13 BA0 ~ BA1 DQ0 ~ DQ63 DQS0 ~ DQS8 CK0,CK0 ~ CK2, CK2 CKE0, CKE1(for double banks) CS0, CS1(for double banks) RAS CAS WE CB0 ~ CB7 (for x72 module) Function Address input (Multiplexed) Bank Select Address Data input/output Data Strobe input/output Clock input Clock enable input Chip select input Row address strobe Column address strobe Write enable Check bit(Data-in/data-out) VDD VDDQ VSS VREF VDDSPD SDA SCL SA0 ~ 2 NC Pin Name DM0 ~ 7, 8(for ECC) Data - in mask Power supply (2.5V) Power Supply for DQS(2.5V) Ground Power supply for reference Serial EEPROM Power/Supply ( 2.3V to 3.6V ) Serial data I/O Serial clock Address in EEPROM No connection Function
Rev. 0.0 April 2004
2GB Unbuffered DIMM
Preliminary DDR SDRAM
2GB, 256M x 64 Non ECC Module (M368L5623MTN) (Populated as 2 bank of x8 DDR SDRAM Module) Functional Block Diagram
CS1 CS0 DQS0 DM0
DM/ CS DQS DM/ CS DQS
DQS4 DM4
DM/ CS DQS DM/ CS DQS
DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1
I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2
D0
I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5
D8
DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQS5 DM5
I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2
D4
I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5
D12
DM/
CS
DQS
DM/
CS
DQS
DM/
CS
DQS
DM/
CS
DQS
DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2
I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2
D1
I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5
D9
DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQS6 DM6
I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2
D5
I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5
D13
DM/
CS
DQS
DM/
CS
DQS
DM/
CS
DQS
DM/
CS
DQS
DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DM3
I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2
D2
I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5
D10
DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQS7 DM7
I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2
D6
I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5
D14
DM/
CS
DQS
DM/
CS
DQS
DM/
CS
DQS
DM/
CS
DQS
DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31
I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2
D3
I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5
D11
DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63
I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2
D7
I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5
D15
D3/D0/D5
VDDSPD SPD
Serial PD SCL WP A0 SA0 A1 SA1 A2 SA2 SDA
VREF VSS VDD/VDDQ
D11/D8/D13
D0 - D15 D0 - D15 D0 - D15 D0 - D15
R=120
CK0/1/2 CK0/1/2 Card Edge
*Cap/D1/D6 * Cap/D9/D14 D4/D2/D7 D12/D10/D15
BA0 - BA1 A0 - A13 RAS CAS CKE 0/1 WE
BA0-BA1 : DDR SDRAMs D0 - D15 * Clock Wiring A0-A13: DDR SDRAMs D0 - D15 RAS : DDR SDRAMs D0 - D15 CAS : DDR SDRAMs D0 - D15 CKE : DDR SDRAMs D0 - D15 WE : DDR SDRAMs D0 - D15 Clock Input *CK0/CK0 *CK1/CK1 *CK2/CK2 DDR SDRAMs 4 DDR SDRAMs 6 DDR SDRAMs 6 DDR SDRAMs
Notes : 1. DQ-to-I/O wiring is shown as recommended but may be changed. 2. DQ/DQS/DM/CKE/CS relationships must be maintained as shown. 3. DQ, DQS, DM/DQS resistors: 22 Ohms + 5%. 4. BAx, Ax, RAS, CAS, WE resistors: 3 Ohms + 5%
*Clock Net Wiring
Rev. 0.0 April 2004
2GB Unbuffered DIMM
Preliminary DDR SDRAM
2GB, 256M x 72 ECC Module (M381L5623MTM) (Populated as 2 bank of x8 DDR SDRAM Module) Functional Block Diagram
CS1 CS0 DQS0 DM0
DM/ CS DQS DM/ CS DQS
DQS4 DM4
DM/ CS DQS DM/ CS DQS
DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1
I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2
D0
I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5
D9
DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQS5 DM5
I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2
D4
I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5
D13
DM/
CS
DQS
DM/
CS
DQS
DM/
CS
DQS
DM/
CS
DQS
DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2
I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2
D1
I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5
D10
DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQS6 DM6
I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2
D5
I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5
D14
DM/
CS
DQS
DM/
CS
DQS
DM/
CS
DQS
DM/
CS
DQS
DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DM3
I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2
D2
I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5
D11
DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQS7 DM7
I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2
D6
I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5
D15
DM/
CS
DQS
DM/
CS
DQS
DM/
CS
DQS
DM/
CS
DQS
DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQS8 DM8
I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2
D3
I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5
D12
DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63
I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2
D7
I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5
D16
DM/
CS
DQS
DM/
CS
DQS
CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7
I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2
D8
I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5
D17
D3/D0/D5 D12/D9/D14 R=120
VDDSPD VDD/VDDQ SPD
D8/D1/D6 D17/D10/D15 D4/D2/D7 D13/D11/D16
Serial PD SCL WP A0 SA0 BA0 - BA1 A0 - A13 RAS CAS CKE0/1 WE A1 SA1 A2 SDA
CK0/1/2
D0 - D17 D0 - D17
Card Edge
VREF
D0 - D17 D0 - D17
SA2
VSS
BA0-BA1 : DDR SDRAMs D0 - D17 * Clock Wiring A0-A13 : DDR SDRAMs D0 - D17 RAS : DDR SDRAMs D0 - D17 CAS : DDR SDRAMs D0 - D17 CKE : DDR SDRAMs D0 - D17 WE : DDR SDRAMs D0 - D17 Clock Input *CK0/CK0 *CK1/CK1 *CK2/CK2 DDR SDRAMs 6 DDR SDRAMs 6 DDR SDRAMs 6 DDR SDRAMs
Notes : 1. DQ-to-I/O wiring is shown as recommended but may be changed. 2. DQ/DQS/DM/CKE/CS relationships must be maintained as shown. 3. DQ, DQS, DM/DQS resistors: 22 Ohms + 5%. 4. BAx, Ax, RAS, CAS, WE resistors:3 Ohms + 5%
*Clock Net Wiring
Rev. 0.0 April 2004
2GB Unbuffered DIMM
Absolute Maximum Ratings
Parameter Voltage on any pin relative to VSS Voltage on VDD & VDDQ supply relative to VSS Storage temperature Power dissipation Short circuit current Symbol VIN, VOUT VDD, VDDQ TSTG PD IOS Value -0.5 ~ 3.6 -1.0 ~ 3.6 -55 ~ +150 1.5 * # of component 50
Preliminary DDR SDRAM
Unit V V C W mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommend operation condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operating Conditions
Parameter
Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70C)
Symbol
VDD VDDQ VREF VTT VIH(DC) VIL(DC) VIN(DC) VID(DC) VI(Ratio) II IOZ IOH IOL IOH IOL
Min
2.3 2.3 0.49*VDDQ VREF-0.04 VREF+0.15 -0.3 -0.3 0.36 0.71 -2 -5 -16.8 16.8 -9 9
Max
2.7 2.7 0.51*VDDQ VREF+0.04 VDDQ+0.3 VREF-0.15 VDDQ+0.3 VDDQ+0.6 1.4 2 5
Unit
V V V V V V V uA uA mA mA mA mA
Note
Supply voltage(for device with a nominal VDD of 2.5V) I/O Supply voltage I/O Reference voltage I/O Termination voltage(system) Input logic high voltage Input logic low voltage Input Voltage Level, CK and CK inputs Input Differential Voltage, CK and CK inputs V-I Matching: Pullup to Pulldown Current Ratio Input leakage current Output leakage current Output High Current(Normal strength driver) ;VOUT = VTT + 0.84V Output High Current(Normal strength driver) ;VOUT = VTT - 0.84V Output High Current(Half strengh driver) ;VOUT = VTT + 0.45V Output High Current(Half strengh driver) ;VOUT = VTT - 0.45V
1 2
3 4
Note : 1.VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on VREF may not exceed +/-2% of the dc value. 2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF 3. VID is the magnitude of the difference between the input level on CK and the input level on CK. 4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
Rev. 0.0 April 2004
2GB Unbuffered DIMM
DDR SDRAM IDD spec table
M368L5623MTN [ (128M x 8) * 16, 2GB Non ECC Module ]
Symbol IDD0 IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 IDD6 Normal Low power IDD7A 3,920 3,400 3,400 B3(DDR333@CL=2.5) 1,600 1,840 96 560 480 480 960 2,080 2,560 2,880 128 A2(DDR266@CL=2) 1,400 1,640 96 480 400 480 880 1,800 2,280 2,720 128 B0(DDR266@CL=2.5) 1,400 1,640 96 480 400 480 880 1,800 2,280 2,720 128
Preliminary DDR SDRAM
(VDD=2.7V, T = 10C) Unit mA mA mA mA mA mA mA mA mA mA mA mA mA Optional Notes
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M381L5623MTM [ (128M x 8) * 18, 2GB ECC Module ]
Symbol IDD0 IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 IDD6 Normal Low power IDD7A 4,410 3,825 3,825 B3(DDR333@CL=2.5) 1,800 2,070 108 630 540 540 1,080 2,340 2,880 3,240 144 A2(DDR266@CL=2) 1,575 1,845 108 540 450 540 990 2,025 2,565 3,060 144 B0(DDR266@CL=2.5) 1,575 1,845 108 540 450 540 990 2,025 2,565 3,060 144
(VDD=2.7V, T = 10C) Unit mA mA mA mA mA mA mA mA mA mA mA mA mA Optional Notes
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 0.0 April 2004
2GB Unbuffered DIMM
AC Operating Conditions
Parameter/Condition Input High (Logic 1) Voltage, DQ, DQS and DM signals Input Low (Logic 0) Voltage, DQ, DQS and DM signals. Input Differential Voltage, CK and CK inputs Input Crossing Point Voltage, CK and CK inputs Symbol VIH(AC) VIL(AC) VID(AC) VIX(AC) 0.7 0.5*VDDQ-0.2 Min VREF + 0.31 VREF - 0.31 VDDQ+0.6 Max
Preliminary DDR SDRAM
Unit V V V V
Note 3 3 1 2
0.5*VDDQ+0.2
Note : 1. VID is the magnitude of the difference between the input level on CK and the input on CK. 2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same. 3. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation. the AC and DC input specifications are related to a Vref envelope that has been bandwidth limited 20MHz.
Vtt=0.5*VDDQ
RT=50 Output Z0=50 CLOAD=30pF VREF =0.5*VDDQ
Output Load Circuit (SSTL_2)
Input/Output Capacitance
Parameter Input capacitance(A0 ~ A13, BA0 ~ BA1,RAS,CAS,WE ) Input capacitance(CKE0,CKE1) Input capacitance( CS0, CS1) Input capacitance( CLK0, CLK1,CLK2) Input capacitance(DM0~DM7, DM8(for ECC)) Data & DQS input/output capacitance(DQ0~DQ63) Data input/output capacitance (CB0~CB7) Symbol CIN1 CIN2 CIN3 CIN4 CIN5 Cout1 Cout2 Min 65 42 42 28 10 10 -
(VDD=2.5V, VDDQ=2.5V, TA= 25C, f=1MHz) M368L5623MTN Max 81 50 50 34 12 12 M381L5623MTM Min 69 44 44 28 10 10 10 Max 87 53 53 34 12 12 12 pF pF pF pF pF pF pF Unit
Rev. 0.0 April 2004
2GB Unbuffered DIMM
AC Timing Parameters & Specifications
Parameter
Row cycle time Refresh row cycle time Row active time RAS to CAS delay Row precharge time Row active to Row active delay Write recovery time Last data in to Read command Col. address to Col. address delay Clock cycle time Clock high level width Clock low level width DQS-out access time from CK/CK Output data access time from CK/CK Data strobe edge to output data edge Read Preamble Read Postamble CK to valid DQS-in DQS-in setup time DQS-in hold time DQS falling edge to CK rising-setup time DQS falling edge from CK rising-hold time DQS-in high level width DQS-in low level width DQS-in cycle time Address and Control Input setup time(fast) Address and Control Input hold time(fast) Address and Control Input setup time(slow) Address and Control Input hold time(slow) Data-out high impedance time from CK/CK Data-out low impedance time from CK/CK Output Slew Rate Matching Ratio(rise to fall) CL=2.0 CL=2.5
Preliminary DDR SDRAM
Symbol
tRC tRFC tRAS tRCD tRP tRRD tWR tWTR tCCD tCK tCH tCL tDQSCK tAC tDQSQ tRPRE tRPST tDQSS tWPRES tWPRE tDSS tDSH tDQSH tDQSL tDSC tIS tIH tIS tIH tHZ tLZ tSLMR
B3 (DDR333@CL=2.5)) Min
60 120 42 18 18 12 15 1 1 7.5 6 0.45 0.45 -0.6 -0.7 0.9 0.4 0.75 0 0.25 0.2 0.2 0.35 0.35 0.9 0.75 0.75 0.8 0.8 -0.7 -0.7 0.67 +0.7 +0.7 1.5 1.1 12 12 0.55 0.55 +0.6 +0.7 0.45 1.1 0.6 1.25 70K
A2 (DDR266@CL=2.0) Min
65 120 45 20 20 15 15 1 1 7.5 7.5 0.45 0.45 -0.75 -0.75 0.9 0.4 0.75 0 0.25 0.2 0.2 0.35 0.35 0.9 0.9 0.9 1.0 1.0 -0.75 -0.75 0.67 +0.75 +0.75 1.5 1.1 12 12 0.55 0.55 +0.75 +0.75 0.5 1.1 0.6 1.25 120K
B0 (DDR266@CL=2.5)) Min
65 120 45 20 20 15 15 1 1 10 7.5 0.45 0.45 -0.75 -0.75 0.9 0.4 0.75 0 0.25 0.2 0.2 0.35 0.35 0.9 0.9 0.9 1.0 1.0 -0.75 -0.75 0.67 +0.75 +0.75 1.5 1.1 12 12 0.55 0.55 +0.75 +0.75 0.5 1.1 0.6 1.25 120K
Unit
ns ns ns ns ns ns ns tCK tCK ns ns tCK tCK ns ns ns tCK tCK tCK ns tCK tCK tCK tCK tCK tCK ns ns ns ns ns ns
Note
Max
Max
Max
12
3
i,5.7~9 i,5.7~9 i, 6~9 i, 6~9 1 1
Rev. 0.0 April 2004
2GB Unbuffered DIMM
B3 (DDR333@CL=2.5)) Min
Mode register set cycle time DQ & DM setup time to DQS DQ & DM hold time to DQS Control & Address input pulse width DQ & DM input pulse width Power down exit time Exit self refresh to non-Read command Exit self refresh to read command Refresh interval time Output DQS valid window Clock half period Data hold skew factor DQS write postamble time Active to Read with Auto precharge command Autoprecharge write recovery + Precharge time tMRD tDS tDH tIPW tDIPW tPDEX tXSNR tXSRD tREFI tQH tHP tQHS tWPST tRAP tDAL 0.4 18 (tWR/tCK) +(tRP/tCK) tHP -tQHS tCLmin or tCHmin 12 0.45 0.45 2.2 1.75 6 75 200 7.8 0.55 0.6 0.4 20 (tWR/tCK) +(tRP/tCK) tHP -tQHS tCLmin or tCHmin
Preliminary DDR SDRAM
A2 (DDR266@CL=2.0) Min
15 0.5 0.5 2.2 1.75 7.5 75 200 7.8 0.75 0.6 0.4 20 (tWR/tCK) +(tRP/tCK) tCK 13 tHP -tQHS tCLmin or tCHmin
Parameter
Symbol
B0 (DDR266@CL=2.5)) Min
15 0.5 0.5 2.2 1.75 7.5 75 200 7.8 0.75 0.6
Unit
ns ns ns ns ns ns ns tCK us ns ns ns tCK
Note
Max
Max
Max
j, k j, k 8 8
4 11 10, 11 11 2
System Characteristics for DDR SDRAM
The following specification parameters are required in systems using DDR333 & DDR266 devices to ensure proper system performance. these characteristics are for system simulation purposes and are guaranteed by design.
Table 1 : Input Slew Rate for DQ, DQS, and DM
AC CHARACTERISTICS PARAMETER DQ/DM/DQS input slew rate measured between VIH(DC), VIL(DC) and VIL(DC), VIH(DC) SYMBOL DCSLEW MIN TBD DDR333 MAX TBD MIN TBD DDR266 MAX TBD Units V/ns Notes a, m
Table 2 : Input Setup & Hold Time Derating for Slew Rate
Input Slew Rate 0.5 V/ns 0.4 V/ns 0.3 V/ns tIS 0 +50 +100 tIH 0 0 0 Units ps ps ps Notes i i i
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
Input Slew Rate 0.5 V/ns 0.4 V/ns 0.3 V/ns tDS 0 +75 +150 tDH 0 +75 +150 Units ps ps ps Notes k k k
Rev. 0.0 April 2004
2GB Unbuffered DIMM
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Delta Slew Rate +/- 0.0 V/ns +/- 0.25 V/ns +/- 0.5 V/ns tDS 0 +50 +100 tDH 0 +50 +100 Units ps ps ps Notes j j j
Preliminary DDR SDRAM
Table 5 : Output Slew Rate Characteristic (X4, X8 Devices only)
Slew Rate Characteristic Pullup Slew Rate Pulldown slew Typical Range (V/ns) 1.2 ~ 2.5 1.2 ~ 2.5 Minimum (V/ns) 1.0 1.0 Maximum (V/ns) 4.5 4.5 Notes a,c,d,f,g,h b,c,d,f,g,h
Table 6 : Output Slew Rate Characteristic (X16 Devices only)
Slew Rate Characteristic Pullup Slew Rate Pulldown slew Typical Range (V/ns) 1.2 ~ 2.5 1.2 ~ 2.5 Minimum (V/ns) 0.7 0.7 Maximum (V/ns) 5.0 5.0 Notes a,c,d,f,g,h b,c,d,f,g,h
Table 7 : Output Slew Rate Matching Ratio Characteristics
AC CHARACTERISTICS PARAMETER Output Slew Rate Matching Ratio (Pullup to Pulldown) MIN TBD DDR333 MAX TBD MIN TBD DDR266 MAX TBD Notes e,m
Rev. 0.0 April 2004
2GB Unbuffered DIMM
Component Notes
Preliminary DDR SDRAM
1. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. these parameters are not referenced to a specific voltage level but specify when the device output in no longer driving (HZ), or begins driving (LZ). 2. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but sys tem performance (bus turnaround) will degrade accordingly. 3. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. when no writes were previ ously in progress on the bus, DQS will be moving from High- Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS. 4. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device. 5. For command/address input slew rate 1.0 V/ns 6. For command/address input slew rate 0.5 V/ns and < 1.0 V/ns 7. For CK & CK slew rate 1.0 V/ns 8. These parameters guarantee device timing, but they are not necessarily tested on each device. They may be guaranteed by device design or tester correlation. 9. Slew Rate is measured between VOH(ac) and VOL(ac). 10. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tCL and tCH).....For example, tCL and tCH are = 50% of the period, less the half period jitter (tJIT(HP)) of the clock source, and less the half period jitter due to crosstalk (tJIT(crosstalk)) into the clock traces. 11. tQH = tHP - tQHS, where: tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS accounts for 1) The pulse duration distortion of on-chip clock circuits; and 2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects, and pchannel to n-channel variation of the output drivers. 12. tDQSQ Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any given cycle. 13. tDAL = (tWR/tCK) + (tRP/tCK) For each of the terms above, if not already an integer, round to the next highest integer. Example: For DDR266B at CL=2.5 and tCK=7.5ns tDAL = (15 ns / 7.5 ns) + (20 ns/ 7.5ns) = (2) + (3) tDAL = 5 clocks
Rev. 0.0 April 2004
2GB Unbuffered DIMM
System Notes : a. Pullup slew rate is characteristized under the test conditions as shown in Figure 1.
Preliminary DDR SDRAM
Test point Output 50 VSSQ Figure 1 : Pullup slew rate test load
b. Pulldown slew rate is measured under the test conditions shown in Figure 2.
VDDQ 50 Output Test point Figure 2 : Pulldown slew rate test load
c. Pullup slew rate is measured between (VDDQ/2 - 320 mV +/- 250 mV) Pulldown slew rate is measured between (VDDQ/2 + 320 mV +/- 250 mV) Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output switching. Example : For typical slew rate, DQ0 is switching For minimum slew rate, all DQ bits are switching from either high to low, or low to high. The remaining DQ bits remain the same as for previous state. d. Evaluation conditions Typical : 25 C (T Ambient), VDDQ = 2.5V, typical process Minimum : 70 C (T Ambient), VDDQ = 2.3V, slow - slow process Maximum : 0 C (T Ambient), VDDQ = 2.7V, fast - fast process e. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature and voltage range. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. f. Verified under typical conditions for qualification purposes. g. TSOPII package devices only. h. Only intended for operation up to 266 Mbps per pin. i. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5V/ns as shown in Table 2. The Input slew rate is based on the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions. j. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ, as shown in Tables 3 & 4. Input slew rate is based on the larger of AC-AC delta rise, fall rate and DC-DC delta rise, Input slew rate is based on the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions. The delta rise/fall rate is calculated as: {1/(Slew Rate1)} - {1/(Slew Rate2)} For example : If Slew Rate 1 is 0.5 V/ns and slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is - 0.5ns/V . Using the table given, this would result in the need for an increase in tDS and tDH of 100 ps. k. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser on the lesser of the AC - AC slew rate and the DC- DC slew rate. The input slew rate is based on the lesser of the slew rates deter mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions. m. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi tions through the DC region must be monotony.
Rev. 0.0 April 2004
2GB Unbuffered DIMM
Command Truth Table
COMMAND Register Register Extended MRS Mode Register Set Auto Refresh Refresh Entry Self Refresh Exit CKEn-1 H H H L H H H H Bank Selection All Banks Entry Exit Entry Precharge Power Down Mode Exit DM No operation (NOP) : Not defined L H H X H L H H H L H CKEn X X H L H X X X X X L H L CS L L L L H L L L L L H L X H L H L RAS L L L H X L H H H L X V X X H X V X X H X H X H
Preliminary DDR SDRAM
(V=Valid, X=Dont Care, H=Logic High, L=Logic Low) CAS L L L H X H L L H H X V X X H X V WE BA0,1 A10/AP L L H H X H H L L L X V X X H X V X X 8 9 9 X X V X L H V V V L H L H X X A0 ~ A9 A11~ A13 Note 1, 2 1, 2 3 3 3 3 4 4 4 4, 6 7 5
OP CODE OP CODE X X Row Address
Column Address Column Address
Bank Active & Row Addr. Read & Column Address Write & Column Address Burst Stop Precharge Auto Precharge Disable Auto Precharge Enable Auto Precharge Disable Auto Precharge Enable
Active Power Down
Note : 1. OP Code : Operand Code. A0 ~ A13 & BA0 ~ BA1 : Program keys. (@EMRS/MRS) 2. EMRS/ MRS can be issued only at all banks precharge state. A new command can be issued 2 clock cycles after EMRS or MRS. 3. Auto refresh functions are same as the CBR refresh of DRAM. The automatic precharge without row precharge command is meant by "Auto". Auto/self refresh can be issued only at all banks precharge state. 4. BA0 ~ BA1 : Bank select addresses. If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected. If BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected. If BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected. If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected. 5. If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected. 6. During burst write with auto precharge, new read/write command can not be issued. Another bank read/write command can be issued after the end of burst. New row active of the associated bank can be issued at tRP after the end of burst. 7. Burst stop command is valid at every burst length. 8. DM sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0). 9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.
Rev. 0.0 April 2004
2GB Unbuffered DIMM
Physical Dimensions : 256Mx64 (M368L5623MTN)
Preliminary DDR SDRAM
Units : Inches (Millimeters)
5.25 0.006 (133.350 0.15) 5.077 (128.950) 1.25 0.006 (31.75 0.15) (2X) 0.157 (4.00)
0.118Min (3.00Min)
A
B 0.100 (2.30)
2.5 +0.1/-0.0
0.10 M C BA
2.55
(10.00)
0.393
1.95
(64.77)
(49.53)
(2.50 )
0.26 (6.62)
0.100
0.250 (6.350)
0.1570.0039 (4.000.1) 0.1496 (3.80)
0.039 0.002 (1.000 0.050) 0.0787 R (2.00) 0.0078 0.006 (0.20 0.15) 0.050 (1.270) 0.1575 (4.00)
0.118 (3.00)
2.175 Detail A
0.071 (1.80)
Detail B
0.10 M C A M B
Tolerances : 0.005(.13) unless otherwise specified. The used device is 128Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H1G0838M-T***
Rev. 0.0 April 2004
0.7 (17.80) 0.145 Max (3.67 Max) 0.050 0.0039 (1.270 0.10)
2GB Unbuffered DIMM
Physical Dimensions : 256Mx72 (M381L5623MTM)
Preliminary DDR SDRAM
Units : Inches (Millimeters)
5.25 0.006 (133.350 0.15) 5.077 (128.950) 1.25 0.006 (31.75 0.15) (2X) 0.157 (4.00)
0.118Min (3.00Min)
A
B 0.100 (2.30)
2.5 +0.1/-0.0
0.10 M C BA
2.55
(10.00)
0.393
1.95
(64.77)
(49.53)
(2.50 )
0.26 (6.62)
0.100
0.250 (6.350)
0.1570.0039 (4.000.1) 0.1496 (3.80)
0.039 0.002 (1.000 0.050) 0.0787 R (2.00) 0.0078 0.006 (0.20 0.15) 0.050 (1.270) 0.1575 (4.00)
0.118 (3.00)
2.175 Detail A
0.071 (1.80)
Detail B
0.10 M C A M B
Tolerances : 0.005(.13) unless otherwise specified. The used device is 128Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H1G0838M-T***
Rev. 0.0 April 2004
0.7 (17.80) 0.145 Max (3.67 Max) 0.050 0.0039 (1.270 0.10)

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